IRF6100PBF
- Description
- -20V Single P-Channel HEXFET Power MOSFET in a 4-Lead FlipFET package
- Gate to Source Voltage (Vgs)
- 12V
- Drain to Source Voltage (Vdss)
- 20V
- Continuous Drain Current (ID)
- 5.1A
- Input Capacitance
- 1.23nF
- Datasheet
Quantity
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- Drain to Source Voltage (Vdss):20V
- Continuous Drain Current (ID):5.1A
- Low On-Resistance (Rds On Max):65mO
- Input Capacitance:1.23nF
- Wide Operating Temperature Range:-55°C to 150°C
- Max Power Dissipation:2.2W
- Lead Free and RoHS Compliant:Environmentally friendly design
The Infineon -20V Single P-Channel HEXFET Power MOSFET is a high-performance electronic component designed for efficient power management in various applications. Encased in a compact 4-Lead FlipFET package, this MOSFET offers exceptional reliability and performance, making it ideal for surface mount technology (SMD/SMT) applications. With a maximum operating temperature of 150°C and a wide range of electrical specifications, it ensures optimal functionality in demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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