MPN
SIS434DN-T1-GE3
Manufacturer
Description
Single N-Channel 40 V 0.0076 Ohm 52 W SMT Power Mosfet - PowerPAK-1212-8
MPN
SIS434DN-T1-GE3
Total Available Quantity
-
Main Attributes
Gate to Source Voltage (Vgs)
20V
Drain to Source Voltage (Vdss)
40V
Continuous Drain Current (ID)
35A
Drain to Source Resistance
6.3mO
Input Capacitance
1.53nF
Max Junction Temperature (Tj)
150°C
Specifications
Mount
Surface Mount
Case/Package
TO-252
Number of Pins
8
Drain to Source Breakdown Voltage
40V
Threshold Voltage
2.2V
Power Dissipation
3.8W
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
RoHS
Compliant
Contact Plating
Tin
Element Configuration
Single
Fall Time
20ns
Height
1.17mm
Lead Free
Lead Free
Max Power Dissipation
52W
Number of Channels
1
Number of Elements
1
Radiation Hardening
No
Rds On Max
7.6mO
REACH SVHC
Unknown
Resistance
7.6mO
Rise Time
25ns
Schedule B
8541290080
Turn-Off Delay Time
25ns
Turn-On Delay Time
10ns
MPN
SIS434DN-T1-GE3
Total Available Quantity
-
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