SAK-TC397XX-256F300S BD

The Infineon Power Field-Effect Transistor (FET) is a high-performance N-Channel MOSFET designed to deliver exceptional efficiency and reliability in power management applications. With a remarkable current rating of 300A and a low on-resistance of just 0.00077 ohms, this silicon-based transistor is ideal for demanding applications where power loss must be minimized. Its robust construction and advanced metal-oxide semiconductor technology ensure optimal performance in various electronic circuits, making it a preferred choice for engineers and designers.