MPN
IRFB5620PBF
Manufacturer
Description
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
MPN
IRFB5620PBF
Total Available Quantity
-
Main Attributes
Mount
Through Hole
Case/Package
TO-220AB
Drain to Source Voltage (Vdss)
200V
Threshold Voltage
5V
Gate to Source Voltage (Vgs)
20V
Power Dissipation
144W
Number of Pins
3
Specifications
Continuous Drain Current (ID)
25A
Rds On Max
72.5mO
Input Capacitance
1.71nF
Lifecycle Status
Production
Contact Plating
Tin
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
60mO
Dual Supply Voltage
200V
Element Configuration
Single
Fall Time
9.9ns
Max Junction Temperature (Tj)
175°C
Max Operating Temperature
175°C
Max Power Dissipation
144W
Min Operating Temperature
-55°C
Nominal Vgs
5V
Number of Channels
1
Number of Elements
1
On-State Resistance
72.5mO
Package Quantity
1,000
Resistance
72.5MO
Rise Time
14.6ns
Schedule B
8541290080
Termination
Through Hole
Turn-Off Delay Time
17.1ns
Turn-On Delay Time
8.6ns
Height
9.02mm
Length
10.668mm
Width
4.826mm
Lead Free
Lead Free
REACH SVHC
Unaffected
Radiation Hardening
No
RoHS
Compliant
MPN
IRFB5620PBF
Total Available Quantity
-
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